Электронная библиотека (репозиторий) Томского государственного университета
Kobtsev, Daniil A.

Add to Quick Collection   All 4 Results

Showing items 1 - 4 of 4.
  • «
  • ←
  • 1
  • →
  • »
Sort:
 Add All Items to Quick Collection
Add   Effect of gallium arsenide charge carrier life time on the generation and detection efficiency of continuous and pulsed terahertz radiation
Authors: Kobtsev, Daniil A. | Tyazhev, Anton V. | Kolesnikova, Irina I. | Redkin, Ruslan A.
Source: Russian physics journal. 2021. Vol. 63, № 11. P. 1997-2003
Type: статьи в журналах
Date: 2021
Description: A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed. Their operating characteristics i ... More
Add   Methods of preparation and temporal stability of gase and InSe nanolayers
Authors: Redkin, Ruslan A. | Kobtsev, Daniil A. | Bereznaya, Svetlana A. | Korotchenko, Zoya V. | Novikov, Vadim A. | Sarkisov, Sergey Yu.
Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description: GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of ... More
Add   Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes
Authors: Kolesnikova, Irina I. | Kobtsev, Daniil A. | Redkin, Ruslan A. | Voevodin, Vladimir I. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Sarkisov, Yuri S. | Sarkisov, Sergey Yu. | Atuchin, Victor V.
Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description: The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c ... More
Add   The visibility and stability of GaSe nanoflakes of about 50 layers on SiO2/Si wafers
Authors: Redkin, Ruslan A. | Kobtsev, Daniil A. | Kolesnikova, Irina I. | Bereznaya, Svetlana A. | Sarkisov, Yuri S. | Voevodin, Vladimir | Novikov, Vadim A. | Mihaylov, Timofei | Sarkisov, Sergey Yu.
Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description: GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub ... More
  • «
  • ←
  • 1
  • →
  • »
^