Электронная библиотека (репозиторий) Томского государственного университета
топологические изоляторы | Chulkov, Evgueni V. | Eremeev, Sergey V. | 2018

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Add   Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
Authors: Okuda, Taichi | Schwier, E. F. | Iwasawa, H. | Shimada, Kenya | Natamane, M. | Taniguchi, Masaki | Rusinov, Igor P. | Eremeev, Sergey V. | Kokh, Konstantin A. | Annese, E. | Golyashov, Vladimir A. | Tereshchenko, Oleg E. | Chulkov, Evgueni V. | Kimura, Akio
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description: We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp ... More
Add   Formation of interfaces between topological and magnetic insulators
Authors: Eremeev, Sergey V. | Otrokov, Mikhail M. | Chulkov, Evgueni V.
Source: Международная конференция "Перспективные материалы с иерархической структурой для новых технологий и надежных конструкций" ; X Международная конференция "Химия нефти и газа" : тезисы докладов. Томск, 2018. С. 851
Type: статьи в сборниках
Date: 2018
Add   New universal type of interface in the magnetic insulator/topological insulator heterostructures
Authors: Eremeev, Sergey V. | Otrokov, Mikhail M. | Chulkov, Evgueni V.
Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description: Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan ... More
Add   Topological states induced by local structural modification of the polar BiTeI(0001) surface
Authors: Eremeev, Sergey V. | Golyashov, Vladimir A. | Kaveev, Andrey K. | Tereshchenko, Oleg E. | Kokh, Konstantin A. | Chulkov, Evgueni V. | Bentmann, Hendrik | Reinert, Friedrich | Fiedler, Sebastian
Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa ... More
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