Электронная библиотека (репозиторий) Томского государственного университета
топологические изоляторы | Chulkov, Evgueni V. | 2018

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Add   Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
Authors: Okuda, Taichi | Schwier, E. F. | Iwasawa, H. | Shimada, Kenya | Natamane, M. | Taniguchi, Masaki | Rusinov, Igor P. | Eremeev, Sergey V. | Kokh, Konstantin A. | Annese, E. | Golyashov, Vladimir A. | Tereshchenko, Oleg E. | Chulkov, Evgueni V. | Kimura, Akio
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description: We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp ... More
Add   Formation of interfaces between topological and magnetic insulators
Authors: Eremeev, Sergey V. | Otrokov, Mikhail M. | Chulkov, Evgueni V.
Source: Международная конференция "Перспективные материалы с иерархической структурой для новых технологий и надежных конструкций" ; X Международная конференция "Химия нефти и газа" : тезисы докладов. Томск, 2018. С. 851
Type: статьи в сборниках
Date: 2018
Add   Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures
Authors: Shvets, I. A. | Tugushev, V. V. | Chulkov, Evgueni V. | Menshov, V. N.
Source: Journal of magnetism and magnetic materials. 2018. Vol. 459. P. 231-235
Type: статьи в журналах
Date: 2018
Description: We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interfac ... More
Add   New universal type of interface in the magnetic insulator/topological insulator heterostructures
Authors: Eremeev, Sergey V. | Otrokov, Mikhail M. | Chulkov, Evgueni V.
Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description: Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan ... More
Add   Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures
Authors: Menshov, V. N. | Shvets, I. A. | Chulkov, Evgueni V. | Tugushev, V. V.
Source: Journal of magnetism and magnetic materials. 2018. Vol. 459. P. 335-339
Type: статьи в журналах
Date: 2018
Description: Today, searching for materials hosting quantum anomalous Hall effect (QAHE) at high temperature and with long conductivity plateau is an important issue for next generation spintronic applications at ... More
Add   TCNQ physisorption on the topological Insulator Bi2Se3
Authors: Lisi, Simone | De Luca, Oreste | Warr, Daniel A. | Lawrence, J. | Otrokov, Mikhail M. | Aliev, Ziya S. | Chulkov, Evgueni V. | Agostino, Raffaele G. | Arnau, Andrés | Della Pia, Ada | Papagno, Marco | Costantini, Giovanni
Source: ChemPhysChem. 2018. Vol. 19, № 18. P. 2405-2410
Type: статьи в журналах
Date: 2018
Description: Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin‐momentum locked and gapless surface states. The breaking of the time‐reversal sym ... More
Add   Topological states induced by local structural modification of the polar BiTeI(0001) surface
Authors: Eremeev, Sergey V. | Golyashov, Vladimir A. | Kaveev, Andrey K. | Tereshchenko, Oleg E. | Kokh, Konstantin A. | Chulkov, Evgueni V. | Bentmann, Hendrik | Reinert, Friedrich | Fiedler, Sebastian
Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa ... More
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