Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.

Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445

Type: статьи в журналах

Date: 2020

Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More

Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.

Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)

Type: статьи в журналах

Date: 2020

Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on