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Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Mynbaev, Karim D. |
Świątek, Zbigniew |
Morgiel, Jerzy |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Marin, Denis V. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Type: статьи в журналах
Date: 2022
Description:
Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence
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Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Authors:
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Yakushev, Maxim V. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Fitsych, Olena I. |
Kurbanov, Kurban R.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description:
Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi
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Authors:
Mynbaev, Karim D. |
Świątek, Zbigniew |
Morgiel, J. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Yakushev, Maxim V. |
Izhnin, Igor I. |
Fitsych, Olena I. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V.
Source: Infrared physics and technology. 2020. Vol. 109. P. 103388 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Optical reflectance in the visible wavelength range, transmission electron microscopy, and the Hall-effect measurements with mobility spectrum analysis have been used for the direct comparison of the
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Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description:
Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Syvorotka, I. I. |
Korotaev, Alexander G. |
Voytsekhovskiy, Alexander V. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Marin, Denis V. |
Bonchyk, A. Yu. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Świątek, Zbigniew |
Morgiel, Jerzy |
Jakiela, Rafal |
Savytskyy, Hrygory V.
Source: Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Type: статьи в журналах
Date: 2020
Description:
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
Authors:
Fitsych, Olena I. |
Świątek, Zbigniew |
Morgiel, Y. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Yakushev, Maxim V. |
Marin, Denis V. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Izhnin, Igor I.
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description:
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op
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Authors:
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Y. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Bonchyk, A. Yu. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Yakushev, Maxim V.
Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Type: статьи в журналах
Date: 2019
Description:
Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface l
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