Электронная библиотека (репозиторий) Томского государственного университета
Romanov, I. S.

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Add   Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN
Authors: Romanov, I. S. | Prudaev, Ilya A. | Brudnyi, Valentin N.
Source: Russian physics journal. 2018. Vol. 61, № 1. P. 187-190
Type: статьи в журналах
Date: 2018
Description: The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coeffi ... More
Add   On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
Authors: Kopyev, V. V. | Romanov, I. S. | Oleynik, V. L. | Prudaev, Ilya A.
Source: Semiconductors. 2017. Vol. 51, № 2. P. 232-238
Type: статьи в журналах
Date: 2017
Description: The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence ... More
Add   Effect of the barrier thickness on the optical properties of InGaN/GaN/Al2O3 (0001) LED heterostructures
Authors: Romanov, I. S. | Brudnyi, V. N. | Kopyev, V. V. | Novikov, Vadim A. | Marmalyuk, A. A. | Kureshov, V. A. | Sabitov, D. R. | Mazalov, A. V. | Prudaev, Ilya A.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 996-1000
Type: статьи в журналах
Date: 2015
Description: The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting o ... More
Add   Hopping transport of charge carriers in LEDs based on multiple InGaN/GaN quantum wells
Authors: Prudaev, Ilya A. | Baktybaev, A. A. | Romanov, I. S. | Zubrilkina, Yu. L.
Source: Russian physics journal. 2015. Vol. 57, № 9. P. 1246-1250
Type: статьи в журналах
Date: 2015
Description: The results of experimental studies of forward current–voltage characteristics of blue LEDs with an active region consisting of the multiple InGaN/GaN quantum wells are presented. A model explaining t ... More
Add   Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates
Authors: Romanov, I. S. | Brudnyi, Valentin N. | Kopyev, V. V. | Novikov, Vadim A. | Marmalyuk, A. A. | Kureshov, V. A. | Sabitov, D. R. | Mazalov, A. V. | Prudaev, Ilya A.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1604-1608
Type: статьи в журналах
Date: 2015
Description: The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are ... More
Add   Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density
Authors: Prudaev, Ilya A. | Romanov, I. S. | Brudnyi, V. N. | Kopyev, V. V.
Source: Russian physics journal. 2015. Vol. 58, № 5. P. 641-645
Type: статьи в журналах
Date: 2015
Description: Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the qu ... More
Add   Comparative analysis of efficiency droop in InGaN/GaN lightemitting diodes for electrical and optical pumping conditions
Authors: Kopyev, V. V. | Prudaev, Ilya A. | Romanov, I. S.
Source: Journal of Physics: Conference Series. 2014. Vol. 541. P. 012055 (1-4)
Type: статьи в журналах
Date: 2014
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