Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 349
Type: статьи в сборниках
Date: 2018
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012025 (1-5)
Type: статьи в журналах
Date: 2015
Description: In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are di ... More
Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : Abstracts. Tomsk, 2015. P. 209
Type: статьи в сборниках
Date: 2015
Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description: The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol ... More
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 89-90
Type: статьи в сборниках
Date: 2015
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