Электронная библиотека (репозиторий) Томского государственного университета
Chernikov, E. V.

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Add   Ammonia sensors based on resistive structures M–SnO2:Sb–M
Authors: Kalygina, V. M. | Maksimova, Nadezhda K. | Chernikov, E. V. | Tsymbalov, A. V.
Source: Journal of Physics: Conference Series. 2020. Vol. 1499. P. 012037 (1-4)
Type: статьи в журналах
Date: 2020
Description: The paper presents a comparison of the responses of sensors to ammonia in continuous heating and thermal cycling modes, and also shows the dependence of the response time of the sensors on the content ... More
Add   Effect of gold and nickel co-additives on gas-sensitive characteristics of SnO2 thin-film on exposure to hydrogen and nitrogen dioxide
Authors: Almaev, A. V. | Yakovlev, N. N. | Chernikov, E. V.
Source: IOP Conference Series: Materials Science and Engineering. 2019. Vol. 597. P. 012041 (1-6)
Type: статьи в журналах
Date: 2019
Description: The results of investigation of the gas-sensitive properties of sensors based on the tin dioxide thin films with combined additives of gold and nickel obtained by the DC - magnetron sputtering are pre ... More
Add   Effect of Pt, Pd, Ag, Y additives on the surface and in the bulk of tin dioxide thin nanocrystalline films on characteristics of resistive hydrogen sensors
Authors: Almaev, A. V. | Sevastyanov, E. Yu. | Chernikov, E. V. | Maksimova, Nadezhda K.
Source: IEEE SENSORS 2016, Orlando, Florida, USA, October 30 - November 2, 2016 : proceedings. NJ, 2016. P. 157-159
Type: статьи в сборниках
Date: 2016
Add   Effect of Pt, Pd, Au, Ag, Y additives on the characteristics of hydrogen sensors based on SnO2 thin films in the thermo-cyclic operation mode
Authors: Almaev, A. V. | Maksimova, N. K. | Chernikov, E. V.
Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 92-93
Type: статьи в сборниках
Date: 2016
Add   Effect of Pt, Pd, Au additives on the surface and in the bulk of tin dioxide thin films on the electrical and gas-sensitive properties
Authors: Maksimova, N. K | Novikov, Vladimir A. | Rudov, F. V. | Sergeychenko, N. V. | Chernikov, E. V. | Sevastyanov, E. Yu.
Source: Semiconductors. 2012. Vol. 46, № 6. P. 801-809
Type: статьи в журналах
Date: 2012
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