Электронная библиотека (репозиторий) Томского государственного университета
Romanov, I. S.

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Add   Hopping transport of charge carriers in LEDs based on multiple InGaN/GaN quantum wells
Authors: Prudaev, Ilya A. | Baktybaev, A. A. | Romanov, I. S. | Zubrilkina, Yu. L.
Source: Russian physics journal. 2015. Vol. 57, № 9. P. 1246-1250
Type: статьи в журналах
Date: 2015
Description: The results of experimental studies of forward current–voltage characteristics of blue LEDs with an active region consisting of the multiple InGaN/GaN quantum wells are presented. A model explaining t ... More
Add   Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates
Authors: Romanov, I. S. | Brudnyi, Valentin N. | Kopyev, V. V. | Novikov, Vadim A. | Marmalyuk, A. A. | Kureshov, V. A. | Sabitov, D. R. | Mazalov, A. V. | Prudaev, Ilya A.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1604-1608
Type: статьи в журналах
Date: 2015
Description: The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are ... More
Add   Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density
Authors: Prudaev, Ilya A. | Romanov, I. S. | Brudnyi, V. N. | Kopyev, V. V.
Source: Russian physics journal. 2015. Vol. 58, № 5. P. 641-645
Type: статьи в журналах
Date: 2015
Description: Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the qu ... More
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