Электронная библиотека (репозиторий) Томского государственного университета
ионная имплантация | Voytsekhovskiy, Alexander V.

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Add   Ion implantation and ion milling in MBE Hg1-xCdxNe films
Authors: Voytsekhovskiy, Alexander V. | Grigoryev, Denis V. | Mikhailov, Nikolay N. | Talipov, Niyaz H. | Mynbaev, Karim D. | Izhnin, Igor I. | Fitsych, Olena I.
Source: Nuclear instruments and methods in physics research B. 2012. Vol. 272. P. 313-317
Type: статьи в журналах
Date: 2012
Add   Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Korotaev, A. G. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Add   Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Add   Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description: The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s ... More
Add   Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description: Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl ... More
Add   Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
Authors: Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, D. V. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Mynbaev, Karim D. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G.
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More
Add   Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation
Authors: Grigoryev, Denis V. | Korotaev, A. G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Izhnin, Igor I. | Savytskyy, Hrygory V. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Voytsekhovskiy, Alexander V. | Varavin, Vasilii S. | Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Add   Electrical characteristics of epitaxial MCT after As+ implantation
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Dvoretsky, Sergei A. | Smirnov, P. | Izhnin, Igor I.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati ... More
Add   Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Kurbanov, K. R. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Izhnin, Igor I. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Add   Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Izhnin, Igor I. | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012081 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was inves ... More
Add   Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films
Authors: Izhnin, Igor I. | Syvorotka, I. I. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354
Type: статьи в сборниках
Date: 2018
Add   Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Add   Annealing kinetics of radiation defects in boron-implanted p-Hg1-xCdxTe
Authors: Talipov, Niyaz H. | Voytsekhovskiy, Alexander V.
Source: Semiconductor science and technology. 2018. Vol. 33, № 6. P. 065009 (1-8)
Type: статьи в журналах
Date: 2018
Description: The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1−x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor ce ... More
Add   Ion implantation in narrow-gap CdxHg1–xTe solid solutions
Authors: Talipov, Niyaz Kh. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 61, № 6. P. 1005-1023
Type: статьи в журналах
Date: 2018
Description: The results of experimental studies of processes of the radiation defect formation under ion implantation of narrow-gap CdxHg1-xTe solid solutions (MCT) are presented. The processes of formation of st ... More
Add   The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
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