Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Single‑photon avalanche diode detectors based on group IV materials
Authors: Izhnin, Igor I. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Khomyakova, Kristina I. | Douhan, Rahaf M. H. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Akimenko, Nataliya Yu.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Type: статьи в журналах
Date: 2022
Description: Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communicat ... More
Add   Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu. | Voytsekhovskiy, Alexander V.
Source: Vacuum. 2018. Vol. 158. P. 136-140
Type: статьи в журналах
Date: 2018
Description: The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown by the molecular beam epitaxy method with the Al2O3 dielectric formed by the plasma enhanced atomic layer depo ... More
Add   Admittance of barrier nanostructures based on MBE HgCdTe
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 403-409
Type: статьи в журналах
Date: 2022
Description: Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For mid-wave nBn structures, the composition in the absorbing ... More
Add   Admittance of organic LED structures with an emission YAK-203 layer
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2019. Vol. 62, № 2. P. 306-313
Type: статьи в журналах
Date: 2019
Description: The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the ... More
Add   Admittance of pentacene-based MIS-structures with two-layer insulator SiO2-Al2O3
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M.
Source: Russian physics journal. 2021. Vol. 64, № 7. P. 1281-1288
Type: статьи в журналах
Date: 2021
Description: Experimental studies of the admittance of MIS structures based on pentacene with a two-layer insulator SiO2–Al2O3 and back contacts made of various materials (Au, Al, In, and Ag) have been carried out ... More
Add   Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
Add   Comparison of background donor concentration in HgCdTe grown with different technologies
Authors: Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mohylyak, I. A.
Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstracts. Ivano-Frankivsk, 2015. P. 258
Type: статьи в сборниках
Date: 2015
Add   Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Add   UV photodetectors based on wide-gap AlGaN semiconductors
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N.
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 121
Type: статьи в сборниках
Date: 2015
Add   Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2019. Vol. 61, № 11. P. 2126-2134
Type: статьи в журналах
Date: 2019
Description: For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and ... More
Add   Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.
Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : Abstracts. Tomsk, 2015. P. 211
Type: статьи в сборниках
Date: 2015
Add   Admittance of HgCdTe MIS structures with HgTe single quantum well
Authors: Izhnin, I. I. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Fitsych, E. I.
Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015. Lviv, 2015. P. 364
Type: статьи в сборниках
Date: 2015

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