Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.

Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337

Type: статьи в журналах

Date: 2023

Description: The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t ... More

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.

Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907

Type: статьи в журналах

Date: 2023

Description: This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S ... More

Authors: Dirko, Vladimir V. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Kukenov, Olzhas I. | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V.

Source: Nanomaterials. 2023. Vol. 13, № 2. P. 231 (1-12)

Type: статьи в журналах

Date: 2023

Description: This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences o ... More