Электронная библиотека (репозиторий) Томского государственного университета
Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.

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Add   Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes
Authors: Korotaev, A. G. | Kokhanenko, Andrey P. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description: Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
Add   Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description: Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems ... More
Add   Single-element 2D materials beyond graphene: methods of epitaxial synthesis
Authors: Lozovoy, Kirill A. | Izhnin, Igor I. | Kokhanenko, Andrey P. | Dirko, Vladimir V. | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Akimenko, Nataliya Yu.
Source: Nanomaterials. 2022. Vol. 12, № 13. P. 2221 (1-21)
Type: статьи в журналах
Date: 2022
Description: Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, ... More
Add   Influence of edge energy on modeling the growth kinetics of quantum dots
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Add   Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films
Authors: Romanov, I. V. | Dyagterenko, K. M. | Kopylova, Tatyana N. | Kokhanenko, Andrey P. | Nikonova, E. N. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1584-1592
Type: статьи в журналах
Date: 2015
Add   Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More
Add   Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Lozovoy, Kirill A.
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Add   Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
Authors: Lyapunov, D. V. | Grigoryev, Denis V. | Korotaev, A. G. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Iznin, I. I. | Savytskyy, Hrygory V. | Bonchik, A. U. | Dvoretsky, Sergei A. | Pishchagin, Anton A. | Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe ... More
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   Si/Ge-based photosensitive nanoheterostructures for optical communication systems
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Turapin, Alexey M. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Lozovoy, Kirill A.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 246-247
Type: статьи в журналах
Date: 2012
Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Add   Molecular dynamics simulations of the growth of Ge on Si
Authors: Lloyd, Adam | Smith, Roger | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Zhoua, Ying
Source: Surface science. 2020. Vol. 696. P. 121594 (1-9)
Type: статьи в журналах
Date: 2020
Description: The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using
Add   Single element 2D materials and methods of their epitaxial synthesis
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, Vladimir V. | Vinarskiy, V. P. | Fitsych, Olena I.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 43-
Type: статьи в сборниках
Date: 2021
Description: Graphene-like allotrope modifications of single elements, such as borophene (B), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosporene (P), arsenene (As), antimonene (Sb), bismuthene ... More
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Add   Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit
Authors: Barko, A. V. | Levashkin, A. G. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 9-11
Type: статьи в сборниках
Date: 2016
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