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Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description:
Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons
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Authors:
Fitsych, Olena I. |
Świątek, Zbigniew |
Morgiel, Y. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Yakushev, Maxim V. |
Marin, Denis V. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Izhnin, Igor I.
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description:
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op
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Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 271-272
Type: статьи в журналах
Date: 2012
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 89-90
Type: статьи в сборниках
Date: 2015
Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, G. V. |
Mynbaev, Karim D. |
Fitsych, Olena I.
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description:
Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri
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Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907
Type: статьи в журналах
Date: 2023
Description:
This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S
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Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337
Type: статьи в журналах
Date: 2023
Description:
The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t
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Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description:
In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater
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Source: Journal of electronic materials. 2018. Vol. 47, № 5. P. 2694-2702
Type: статьи в журналах
Date: 2018
Description:
The capacitive characteristics of metal–insulator-semiconductor (MIS) structures based on the compositionally graded Hg1−xCdxTe created by molecular beam epitaxy have been experimentally investigated
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Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description:
In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy
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Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description:
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten
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Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description:
The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o
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Source: Russian physics journal. 2015. Vol. 58, № 4. P. 540-551
Type: статьи в журналах
Date: 2015
Description:
Capacitance-voltage characteristics (CV characteristics) of MIS structures based on graded-gap MBE Hg1–xCdxTe (x = 0.22–0.23) with a two-layer plasma-chemical insulator SiO2/Si3N4 are studied under va
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Source: Journal of communications technology and electronics. 2018. Vol. 63, № 9. P. 1112-1118
Type: статьи в журналах
Date: 2018
Description:
Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013
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Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description:
The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the
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