Электронная библиотека (репозиторий) Томского государственного университета
2020 | Voytsekhovskiy, Alexander V.

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Add   Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes
Authors: Korotaev, A. G. | Kokhanenko, Andrey P. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description: Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
Add   Impedance characterization of organic light-emitting structures with thermally activated delayed fluorescence
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Voytsekhovskiy, Alexander V.
Source: Physica status solidi A : applications and materials science. 2020. Vol. 217, № 6. P. 1900847 (1-6)
Type: статьи в журналах
Date: 2020
Description: The organic light-emitting device (OLED) structures based on layer (2,8-bis[N,Ndi(
Add   The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air
Authors: Grigoryev, Denis V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Ripenko, V. S. | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Yakushev, Maxim V. | Dvoretsky, Sergei A. | Korotaev, Alexander G. | Mikhailov, Nikolay N. | Varavin, Vasilii S.
Source: Surface and coatings technology. 2020. Vol. 387. P. 125527 (1-5)
Type: статьи в журналах
Date: 2020
Description: In this work the results of the experimental investigation of the influence of the high-frequency nanosecond
Add   Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Add   TEM studies of structural defects in HgTe/HgCdTe quantum wells
Authors: Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description: Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular ... More
Add   Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Korotaev, A. G. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Add   Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V. | Voytsekhovskiy, Alexander V.
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Add   Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Add   Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te
Authors: Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, J. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, Denis V. | Yakushev, Maxim V. | Izhnin, Igor I. | Fitsych, Olena I. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.
Source: Infrared physics and technology. 2020. Vol. 109. P. 103388 (1-7)
Type: статьи в журналах
Date: 2020
Description: Optical reflectance in the visible wavelength range, transmission electron microscopy, and the Hall-effect measurements with mobility spectrum analysis have been used for the direct comparison of the ... More
Add   Molecular dynamics simulations of the growth of Ge on Si
Authors: Lloyd, Adam | Smith, Roger | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Zhoua, Ying
Source: Surface science. 2020. Vol. 696. P. 121594 (1-9)
Type: статьи в журналах
Date: 2020
Description: The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using
Add   Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Syvorotka, I. I. | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Marin, Denis V. | Bonchyk, A. Yu. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Jakiela, Rafal | Savytskyy, Hrygory V.
Source: Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Type: статьи в журналах
Date: 2020
Description: Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Add   Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Morgiel, Jerzy | Swiatek, Zbigniew | Korotaev, Alexander G. | Fitsych, Olena I. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V.
Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstracts. Tomsk, 2020. P. 460
Type: статьи в сборниках
Date: 2020
Add   Admittance of barrier structures based on mercury cadmium telluride
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Add   Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation
Authors: Sredin, Victor G. | Ramakoti, Ravi | Ananin, Oleg B. | Voytsekhovskiy, Alexander V. | Melekhov, Andrey P.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1009-1011
Type: статьи в сборниках
Date: 2020
Description: The features of the external photoelectric effect caused by soft x-ray radiation of a laser plasma source in CdxHg1-xTe solid solutions are considered. The possibility of a contribution from the ioniz ... More
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