Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | эпитаксиальные пленки

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Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Type: статьи в журналах
Date: 2022
Description: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence ... More
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati ... More
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 89-90
Type: статьи в сборниках
Date: 2015
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012081 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was inves ... More
Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : Abstracts. Tomsk, 2015. P. 209
Type: статьи в сборниках
Date: 2015

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