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Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description:
The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam
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Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description:
The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t
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Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description:
The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the
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