Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | 2019

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Add   Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K
Authors: Nesmelov, Sergey N. | Novikov, Vadim A. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Ivonin, Ivan V. | Degtyarenko, Konstantin M. | Tereshchenko, Evgeny V. | Voytsekhovskiy, Alexander V.
Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
Type: статьи в журналах
Date: 2019
Description: Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap ... More
Add   Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Chernikov, E. V. | Kalygina, V. M. | Novikov, Vadim A.
Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
Type: статьи в журналах
Date: 2019
Description: In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper ... More
Add   Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description: The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam ... More
Add   Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Add   Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description: The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the ... More
Add   Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2019. Vol. 61, № 11. P. 2126-2134
Type: статьи в журналах
Date: 2019
Description: For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and ... More
Add   Admittance of organic LED structures with an emission YAK-203 layer
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2019. Vol. 62, № 2. P. 306-313
Type: статьи в журналах
Date: 2019
Description: The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the ... More
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