Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Single-element 2D materials beyond graphene: methods of epitaxial synthesis
Authors: Lozovoy, Kirill A. | Izhnin, Igor I. | Kokhanenko, Andrey P. | Dirko, Vladimir V. | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Akimenko, Nataliya Yu.
Source: Nanomaterials. 2022. Vol. 12, № 13. P. 2221 (1-21)
Type: статьи в журналах
Date: 2022
Description: Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, ... More
Add   Ion implantation and ion milling in MBE Hg1-xCdxNe films
Authors: Voytsekhovskiy, Alexander V. | Grigoryev, Denis V. | Mikhailov, Nikolay N. | Talipov, Niyaz H. | Mynbaev, Karim D. | Izhnin, Igor I. | Fitsych, Olena I.
Source: Nuclear instruments and methods in physics research B. 2012. Vol. 272. P. 313-317
Type: статьи в журналах
Date: 2012
Add   Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes
Authors: Korotaev, A. G. | Kokhanenko, Andrey P. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description: Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
Add   Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 206-208
Type: статьи в журналах
Date: 2013
Add   Modification of electrophysical parameters of HgCdTe epitaxial heterostructures under the action of a pulsed nanosecond discharge in gas environment at atmospheric-pressure
Authors: Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Ripenko, V. S. | Dvoretsky, Sergei A. | Voytsekhovskiy, Alexander V.
Source: Pulsed lasers and laser applications AMPL-2017 : the 13 International conference, September 10-15, 2017, Tomsk, Russia : abstracts. Tomsk, 2017. P. 139-140
Type: статьи в сборниках
Date: 2017
Add   Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description: Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems ... More
Add   Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V. | Voytsekhovskiy, Alexander V.
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Add   Influence of edge energy on modeling the growth kinetics of quantum dots
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Add   Theoretical model for description of single CdHgTe quantum well photoluminescense spectra
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 223-224
Type: статьи в журналах
Date: 2012
Add   Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Advanced Materials Research. 2014. Vol. 1040. P. 34-38
Type: статьи в журналах
Date: 2014
Add   Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
Authors: Lyapunov, D. V. | Grigoryev, Denis V. | Korotaev, A. G. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Iznin, I. I. | Savytskyy, Hrygory V. | Bonchik, A. U. | Dvoretsky, Sergei A. | Pishchagin, Anton A. | Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe ... More
Add   The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air
Authors: Grigoryev, Denis V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Ripenko, V. S. | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Yakushev, Maxim V. | Dvoretsky, Sergei A. | Korotaev, Alexander G. | Mikhailov, Nikolay N. | Varavin, Vasilii S.
Source: Surface and coatings technology. 2020. Vol. 387. P. 125527 (1-5)
Type: статьи в журналах
Date: 2020
Description: In this work the results of the experimental investigation of the influence of the high-frequency nanosecond
Add   Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Add   Impedance characterization of organic light-emitting structures with thermally activated delayed fluorescence
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Voytsekhovskiy, Alexander V.
Source: Physica status solidi A : applications and materials science. 2020. Vol. 217, № 6. P. 1900847 (1-6)
Type: статьи в журналах
Date: 2020
Description: The organic light-emitting device (OLED) structures based on layer (2,8-bis[N,Ndi(
Add   Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description: The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s ... More

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