Электронная библиотека (репозиторий) Томского государственного университета
2022

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Source: Nanomaterials. 2022. Vol. 12, № 24. P. 4449 (1-19)
Type: статьи в журналах
Date: 2022
Description: The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth a ... More
Source: Journal of surface investigation: X-ray, synchrotron and neutron techniques. 2022. Vol. 16, № 1. P. 140-144
Type: статьи в журналах
Date: 2022
Description: The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are ... More
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