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Authors:
Petrushkov, Mikhail O. |
Abramkin, Demid S. |
Emelyanov, Eugeny A. |
Putyato, Mikhail A. |
Komkov, Oleg S. |
Firsov, Dmitrii D. |
Vasev, Andrey V. |
Yesin, Michail Yu. |
Bakarov, Askhat K. |
Loshkarev, Ivan D. |
Gutakovskii, Anton K. |
Atuchin, Victor V. |
Preobrazhenskii, Valery V.
Source: Nanomaterials. 2022. Vol. 12, № 24. P. 4449 (1-19)
Type: статьи в журналах
Date: 2022
Description:
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth a
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Source: Journal of surface investigation: X-ray, synchrotron and neutron techniques. 2022. Vol. 16, № 1. P. 140-144
Type: статьи в журналах
Date: 2022
Description:
The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are
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