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Authors:
Yakovlev, Nikita N. |
Almaev, Aleksei V. |
Butenko, Pavel N. |
Tetelbaum, David |
Mikhaylov, Alexey |
Nikolskaya, Alena |
Pechnikov, Aleksei I. |
Stepanov, Sergey I. |
Boiko, Mikhail |
Chikiryaka, Andrei V. |
Nikolaev, Vladimir I.
Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description:
The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat
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Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description:
He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer
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