Электронная библиотека (репозиторий) Томского государственного университета

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Add   Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Tetelbaum, David | Mikhaylov, Alexey | Nikolskaya, Alena | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boiko, Mikhail | Chikiryaka, Andrei V. | Nikolaev, Vladimir I.
Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat ... More
Add   Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Chikiryaka, Andrei V. | Timashov, R. B. | Scheglov, Mikhail P. | Butenko, Pavel N. | Almaev, D. A. | Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Add   Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Mikhaylov, A. N. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Timashov, R. B. | Chikiryaka, A. V. | Nikolaev, Vladimir I.
Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description: He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer ... More
Add   Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers
Authors: Nikolaev, Vladimir I. | Polyakov, Alexander | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Guzilova, Lyubov I. | Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description: Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne ... More
Add   Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure
Authors: Almaev, D. A. | Almaev, Aleksei V. | Kopyev, Viktor V. | Nikolaev, Vladimir I. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boyko, M. E. | Butenko, Pavel N. | Scheglov, Mikhail P.
Source: Technical physics letters. 2022. Vol. 48, № 11. P. 61-64
Type: статьи в журналах
Date: 2022
Description: α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties ... More
Add   Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers
Authors: Polyakov, Alexander | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description: We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 ... More
Add   Gas sensors based on pseudohexagonal phase of gallium oxide
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Butenko, Pavel | Stepanov, Sergey I. | Pechnikov, Aleksei I. | Yakovlev, Nikita N. | Sinyugin, Igor | Shapenkov, Sevastian | Scheglov, Mikhail P.
Source: Physica status solidi. 2022. Vol. 259, № 2. P. 2100306 (1-11)
Type: статьи в журналах
Date: 2022
Description: The electrical conductivity of pseudohexagonal ε(κ)-Ga2O3 films under different ambient gases (H2, NO2, O2, and CO) is studied in a range of temperatures from 400 to 550 °C. The exposure of ε(κ)-Ga2O3 ... More
Add   Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Yakovlev, Nikita N. | Butenko, Pavel N. | Stepanov, Sergey I. | Pechnikov, Aleksei I. | Scheglov, Mikhail P. | Chernikov, Evgeniy V.
Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)
Type: статьи в журналах
Date: 2022
Description: Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo ... More
Add   Effect of ambient humidity on the electrical conductivity of polymorphic Ga2O3 structures
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Yakovlev, Nikita N. | Pechnikov, Aleksei I. | Chernikov, Evgeniy V. | Kushnarev, Bogdan O.
Source: Semiconductors. 2021. Vol. 55, № 3. P. 346-353
Type: статьи в журналах
Date: 2021
Description: The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epi ... More
Add   Effect of oxygen on the electrical conductivity of Pt-contacted α-Ga2O2/ε(κ)-Ga2O3 MSM structures on patterned sapphire substrates
Authors: Yakovlev, Nikita N. | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Chernikov, Evgeniy V. | Kushnarev, Bogdan O.
Source: IEEE sensors journal. 2021. Vol. 21, № 13. P. 14636-14644
Type: статьи в журналах
Date: 2021
Description: Electrical conductivity and gas sensitivity of α-Ga2O2/ ε(κ)-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was fo ... More
Add   Effect of oxygen on the Gas-sensitive properties of α-Ga2O3/ε-Ga2O3 structures
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Yakovlev, Nikita N. | Pechnikov, Aleksei I. | Chernikov, Evgeniy V. | Kushnarev, Bogdan O.
Source: ECS meeting abstracts. 2021. Vol. MA2021-01, № 56. P. 1475
Type: статьи в журналах
Date: 2021
Description: Miniature O2 sensors with low energy consumption are of practical interest for the chemical and metallurgical industries, development of systems for analyzing the performance of internal combustion en ... More
Add   HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
Authors: Stepanov, Sergey I. | Nikolaev, Vladimir I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Scheglov, M. P. | Chikiryaka, A. V. | Kushnarev, Bogdan O. | Polyakov, A. Y.
Source: Materials physics and mechanics. 2021. Vol. 47, № 4. P. 577-581
Type: статьи в журналах
Date: 2021
Description: Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture o ... More
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