Authors: Nikolaev, Vladimir I. | Polyakov, Alexander | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Guzilova, Lyubov I. | Pearton, Stephen J.

Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102

Type: статьи в журналах

Date: 2022

Description: Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne ... More

Authors: Polyakov, Alexander | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Pearton, Stephen J.

Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8

Type: статьи в журналах

Date: 2022

Description: We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 ... More