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Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description:
He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer
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Source: Materials physics and mechanics. 2021. Vol. 47, № 4. P. 577-581
Type: статьи в журналах
Date: 2021
Description:
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture o
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