Электронная библиотека (репозиторий) Томского государственного университета
Yakovlev, Nikita N.

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Add   Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Tetelbaum, David | Mikhaylov, Alexey | Nikolskaya, Alena | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boiko, Mikhail | Chikiryaka, Andrei V. | Nikolaev, Vladimir I.
Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat ... More
Add   High sensitivity low-temperature hydrogen sensors based on SnO2/κ(ε)-Ga2O3:Sn heterostructure
Authors: Almaev, Aleksei V. | Yakovlev, Nikita N. | Kopyev, Viktor V. | Nikolaev, Vladimir I. | Butenko, Pavel N. | Deng, Jinxiang | Pechnikov, Aleksei I. | Korusenko, Petr M. | Koroleva, Aleksandra | Zhizhin, Evgeniy V.
Source: Chemosensors. 2023. Vol. 11, № 6. P. 325 (1-15)
Type: статьи в журналах
Date: 2023
Description: The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor p ... More
Add   Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Chikiryaka, Andrei V. | Timashov, R. B. | Scheglov, Mikhail P. | Butenko, Pavel N. | Almaev, D. A. | Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Add   Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Mikhaylov, A. N. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Timashov, R. B. | Chikiryaka, A. V. | Nikolaev, Vladimir I.
Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description: He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer ... More
Add   Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Yakovlev, Nikita N. | Butenko, Pavel N. | Stepanov, Sergey I. | Pechnikov, Aleksei I. | Scheglov, Mikhail P. | Chernikov, Evgeniy V.
Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)
Type: статьи в журналах
Date: 2022
Description: Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo ... More
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