Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Tetelbaum, David | Mikhaylov, Alexey | Nikolskaya, Alena | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boiko, Mikhail | Chikiryaka, Andrei V. | Nikolaev, Vladimir I.

Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895

Type: статьи в журналах

Date: 2023

Description: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat ... More

Authors: Almaev, Aleksei V. | Yakovlev, Nikita N. | Kopyev, Viktor V. | Nikolaev, Vladimir I. | Butenko, Pavel N. | Deng, Jinxiang | Pechnikov, Aleksei I. | Korusenko, Petr M. | Koroleva, Aleksandra | Zhizhin, Evgeniy V.

Source: Chemosensors. 2023. Vol. 11, № 6. P. 325 (1-15)

Type: статьи в журналах

Date: 2023

Description: The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor p ... More

Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Chikiryaka, Andrei V. | Timashov, R. B. | Scheglov, Mikhail P. | Butenko, Pavel N. | Almaev, D. A. | Chernikov, Evgeniy V.

Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)

Type: статьи в журналах

Date: 2023

Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More

Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Mikhaylov, A. N. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Timashov, R. B. | Chikiryaka, A. V. | Nikolaev, Vladimir I.

Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307

Type: статьи в журналах

Date: 2022

Description: He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer ... More

Authors: Almaev, D. A. | Almaev, Aleksei V. | Kopyev, Viktor V. | Nikolaev, Vladimir I. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boyko, M. E. | Butenko, Pavel N. | Scheglov, Mikhail P.

Source: Technical physics letters. 2022. Vol. 48, № 11. P. 61-64

Type: статьи в журналах

Date: 2022

Description: α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties ... More

Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Yakovlev, Nikita N. | Butenko, Pavel N. | Stepanov, Sergey I. | Pechnikov, Aleksei I. | Scheglov, Mikhail P. | Chernikov, Evgeniy V.

Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)

Type: статьи в журналах

Date: 2022

Description: Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo ... More

Authors: Butenko, Pavel N. | Guzilova, L. I. | Chikiryaka, A. V. | Boiko, V. I. | Sharkov, M. D. | Almaev, Aleksei V. | Nikolaev, Vladimir I.

Source: Materials science in semiconductor processing. 2022. Vol. 143. P. 106520 (1-6)

Type: статьи в журналах

Date: 2022

Description: The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of ... More