Электронная библиотека (репозиторий) Томского государственного университета
Chikiryaka, A. V.

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Add   Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Mikhaylov, A. N. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Timashov, R. B. | Chikiryaka, A. V. | Nikolaev, Vladimir I.
Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description: He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer ... More
Add   Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear
Authors: Butenko, Pavel N. | Guzilova, L. I. | Chikiryaka, A. V. | Boiko, V. I. | Sharkov, M. D. | Almaev, Aleksei V. | Nikolaev, Vladimir I.
Source: Materials science in semiconductor processing. 2022. Vol. 143. P. 106520 (1-6)
Type: статьи в журналах
Date: 2022
Description: The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of ... More
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