Электронная библиотека (репозиторий) Томского государственного университета
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Add   Model studies of THz-range generation by down-conversion in GaSe and GaSeS crystals
Authors: Lubenko, D. M. | Andreev, Yury M. | Lanskii, Grigory V. | Losev, V. F.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101T-1-98101T-10
Type: статьи в журналах
Date: 2015
Description: Model study of not phase matched and phase matched optical rectification or down-conversion of Ti:Sapphire laser pulses at 950 nm into THz and far-IR range in pure and S-doped GaSe single crystals is ... More
Add   Алгоритм определения нелинейной восприимчивости легированных кристаллов GaSe в ТГц-диапазоне
Authors: Андреев, Юрий Михайлович (физик) | Назаров, Максим Максимович | Солдатов, Анатолий Николаевич | Шайдуко, Анна Валерьевна | Евдокимов, Максим Георгиевич
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/2. С. 9-12
Type: статьи в журналах
Date: 2013
Add   Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation
Authors: Huang, Zhiming | Tong, Jingchao | Ouyang, Cheng | Chu, Junhao | Andreev, Yury M. | Kokh, Konstantin A. | Lanskii, Grigory V. | Shaiduko, Anna V. | Huang, Jingguo
Source: Applied physics letters. 2013. Vol. 103, № 8. P. 081104-1-081104-4
Type: статьи в журналах
Date: 2013
Add   Growth and optical properties of solid solution crystals GaSe1-xSx
Authors: Kokh, Konstantin A. | Naftaly, Mira | Andreev, Yury M. | Svetlichnyi, Valerii A. | Lanskii, Grigory V. | Lapin, Ivan N. | Izaak, Tatyana I. | Kokh, A. E. | Molloy, John F.
Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Add   GaSe:Er3+ crystals for SHG in the infrared spectral range
Authors: Guo, Jin | Xie, Ji-Jiang | Zhang, Lai-Ming | Gao, J.-Y. | Andreev, Yury M. | Izaak, Tatyana I. | Kokh, Konstantin A. | Lanskii, Grigory V. | Shaiduko, Anna V. | Shabalina, Anastasiia V. | Svetlichnyi, Valerii A. | Feng, Z.-S.
Source: Optics Communications. 2014. Vol. 318. P. 205-211
Type: статьи в журналах
Date: 2014
Add   Structural, elastic and electronic properties of GaSe under biaxial and uniaxial compressive stress
Authors: Kosobutsky, Alexey V. | Sarkisov, Sergey Yu. | Brudnyi, Valentin N.
Source: Journal of physics and chemistry of solids. 2013. Vol. 74, № 9. P. 1240-1248
Type: статьи в журналах
Date: 2013
Add   Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters
Authors: Xie, Ji-Jiang | Zhang, Lai-Ming | Kokh, Konstantin A. | Andreev, Yury M. | Izaak, Tatyana I. | Lanskii, Grigory V. | Shaiduko, Anna V. | Svetlichnyi, Valerii A. | Guo, Jin
Source: Journal of materials science: materials in electronics. 2014. Vol. 25. P. 1757-1760
Type: статьи в журналах
Date: 2014
Add   Ab initio calculations of optical constants of GaSe and InSe layered crystals
Authors: Sarkisov, Sergey Yu. | Brudnyi, V. N. | Zhuravlev, Yu. N. | Kosobutsky, Alexey V.
Source: Physics of the solid state. 2015. Vol. 57, № 9. P. 1735-1740
Type: статьи в журналах
Date: 2015
Description: The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered crystals have been calculated within the density functional theory. The calculations have been perfor ... More
Add   Characterization of Bridgman grown GaSe:Al crystals
Authors: Xie, Ji-Jiang | Zhang, Lai-Ming | Li, Dian-Jun | Yang, Gui-Long | Andreev, Yury M. | Kokh, Konstantin A. | Lanskii, Grigory V. | Shabalina, Anastasiia V. | Shaiduko, Anna V. | Svetlichnyi, Valerii A. | Guo, Jin
Source: CrystEngComm. 2013. Vol. 15, № 32. P. 6323-6328
Type: статьи в журналах
Date: 2013
Add   Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx
Authors: Andreev, Yury M. | Kokh, Konstantin A. | Svetlichnyi, Valerii A. | Lanskii, Grigory V.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description: Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con ... More
Add   Tellurium and sulfur doped GaSe for mid-IR applications
Authors: Guo, Jin | Feng, Z.-S. | Gao, J.-Y. | Xie, Ji-Jiang | Zhang, Lai-Ming | Atuchin, Victor V. | Andreev, Yury M. | Lanskii, Grigory V. | Shaiduko, Anna V. | Kang, Z.-H.
Source: Applied physics B: Lasers and optics. 2012. Vol. 108, № 3. P. 545-552
Type: статьи в журналах
Date: 2012
Add   Легированные кристаллы GaSe: физические свойства и применение в устройствах прикладной спектроскопии
Authors: Ланский, Григорий Владимирович | Кох, Константин Александрович | Солдатов, Анатолий Николаевич | Шайдуко, Анна Валерьевна | Андреев, Юрий Михайлович (физик)
Source: Оптика атмосферы и океана. 2013. Т. 26, № 10. С. 846-853
Type: статьи в журналах
Date: 2013
Add   Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts
Authors: Lubenko, D. M. | Andreev, Yury M. | Kokh, Konstantin A. | Lanskii, Grigory V. | Svetlichnyi, Valerii A. | Losev, V. F.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description: Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop ... More
Add   Расчеты из первых принципов оптических констант слоистых кристаллов GaSe и InSe
Authors: Саркисов, Сергей Юрьевич | Брудный, Валентин Натанович | Журавлев, Юрий Николаевич (физик) | Кособуцкий, Алексей Владимирович
Source: Физика твердого тела. 2015. Т. 57, Вып. 9. С. 1693-1697
Type: статьи в журналах
Date: 2015
Add   The visibility and stability of GaSe nanoflakes of about 50 layers on SiO2/Si wafers
Authors: Redkin, Ruslan A. | Kobtsev, Daniil A. | Kolesnikova, Irina I. | Bereznaya, Svetlana A. | Sarkisov, Yuri S. | Voevodin, Vladimir | Novikov, Vadim A. | Mihaylov, Timofei | Sarkisov, Sergey Yu.
Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description: GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub ... More

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