Электронная библиотека (репозиторий) Томского государственного университета
Savytskyy, Hrygory V. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mikhailov, Nikolay N.

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Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description: Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular ... More
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe ... More
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