Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | 2015 | Dvoretsky, Sergei A.

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Add   Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Nesmelov, Sergey N.
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Add   Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films
Authors: Grigoryev, Denis V. | Lozovoy, Kirill A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Dvoretsky, Sergei A. | Voytsekhovskiy, Alexander V.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description: The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol ... More
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