https://vital.lib.tsu.ru/vital/access/manager/Index en-us 5 Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493187 Thu 13 Dec 2018 10:31:55 KRAT ]]> Admittance of HgCdTe MIS structures with HgTe single quantum well https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000529825 Mon 24 Apr 2017 10:14:57 KRAT ]]> Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000548081 Mon 19 Mar 2018 12:37:29 KRAT ]]> Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000519407 Mon 02 Apr 2018 09:55:59 KRAT ]]>