https://vital.lib.tsu.ru/vital/access/manager/Index en-us 5 Admittance investigation of MIS structures with GgTe-based single quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583388 Thu 26 Oct 2017 11:04:48 KRAT ]]> Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583387 Thu 26 Oct 2017 11:04:46 KRAT ]]> Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583386 Thu 26 Oct 2017 11:04:39 KRAT ]]> Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622054 Thu 22 Mar 2018 09:48:18 KRAT ]]>