https://vital.lib.tsu.ru/vital/access/manager/Index ${session.getAttribute("locale")} 5 Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493287 Wed 12 Dec 2018 19:24:12 KRAT ]]> Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493187 Thu 13 Dec 2018 10:31:55 KRAT ]]>