https://vital.lib.tsu.ru/vital/access/manager/Index ${session.getAttribute("locale")} 5 Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493187 Thu 13 Dec 2018 10:31:55 KRAT ]]> Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000445880 Mon 17 Dec 2018 13:27:02 KRAT ]]> Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893721 Fri 13 May 2022 10:01:28 KRAT ]]>