https://vital.lib.tsu.ru/vital/access/manager/Index ${session.getAttribute("locale")} 5 Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000635227 Wed 31 Oct 2018 16:49:20 KRAT ]]> Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583079 Wed 18 Oct 2017 10:20:24 KRAT ]]> Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000539842 Wed 05 Dec 2018 10:15:23 KRAT ]]> Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794654 Tue 09 Mar 2021 13:25:41 KRAT ]]> Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583386 Thu 26 Oct 2017 11:04:39 KRAT ]]> Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794304 Thu 18 Mar 2021 13:33:42 KRAT ]]> Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000795379 Mon 22 Mar 2021 10:04:58 KRAT ]]> Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000548081 Mon 19 Mar 2018 12:37:29 KRAT ]]> Electro-physical characteristics of MIS structures with HgTe-based single quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552778 Mon 03 Dec 2018 15:39:38 KRAT ]]> Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000519407 Mon 02 Apr 2018 09:55:59 KRAT ]]> Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673793 Fri 24 Jan 2020 09:41:19 KRAT ]]> Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893729 Fri 13 May 2022 10:08:43 KRAT ]]> The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893727 Fri 13 May 2022 10:08:43 KRAT ]]> Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893721 Fri 13 May 2022 10:01:28 KRAT ]]> Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789380 Fri 11 Dec 2020 10:08:03 KRAT ]]>