https://vital.lib.tsu.ru/vital/access/manager/Index en-us 5 Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493187 Thu 13 Dec 2018 10:31:55 KRAT ]]>