https://vital.lib.tsu.ru/vital/access/manager/Index ${session.getAttribute("locale")} 5 https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673868  dc (inverted QWs), the quantization is influenced by coexistence of topological helical edge states and QHE chiral states. However, at d ≈ dc, where QW states exhibit a graphene-like band structure, an accurate Hall resistance quantization in low magnetic fields (B ≤ 1.4 T) and at relatively high temperatures (T ≥ 1.3 K) may be achieved. We observe wider and more robust quantized QHE plateaus for holes, which suggests—in accordance with the “charge reservoir” model—a pinning of the Fermi level in the valence band region. Our analysis exhibits advantages and drawbacks of HgTe QWs for quantum metrology applications, as compared to graphene and GaAs counterparts.]]> Tue 28 Jan 2020 09:50:30 KRAT ]]> https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000895395 Tue 07 Jun 2022 13:03:42 KRAT ]]>