Электронная библиотека (репозиторий) Томского государственного университета
Mikhailov, Nikolay N.

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Source: Optical engineering. 2021. Vol. 60, № 8. 082007-1-082007-9
Type: статьи в журналах
Date: 2021
Description: Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepne ... More
Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstracts. Tomsk, 2020. P. 460
Type: статьи в сборниках
Date: 2020
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi ... More
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 418
Type: статьи в сборниках
Date: 2020
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Source: Physica status solidi B. 2020. Vol. 257, № 5. P. 1900598 (1-5)
Type: статьи в журналах
Date: 2020
Description: Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are co ... More
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 421
Type: статьи в сборниках
Date: 2020
Source: Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Type: статьи в журналах
Date: 2020
Description: Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description: Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular ... More
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