Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | 2018 | молекулярно-лучевая эпитаксия

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Add   Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range
Authors: Kulchitsky, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 9. P. 1112-1118
Type: статьи в журналах
Date: 2018
Description: Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013 ... More
Add   Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Sidorov, Georgiy Yu. | Varavin, Vasilii S. | Vasilev, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description: Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye ... More
Add   Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
Add   Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Add   Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Add   Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films
Authors: Izhnin, Igor I. | Syvorotka, I. I. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354
Type: статьи в сборниках
Date: 2018
Add   Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Journal of electronic materials. 2018. Vol. 47, № 5. P. 2694-2702
Type: статьи в журналах
Date: 2018
Description: The capacitive characteristics of metal–insulator-semiconductor (MIS) structures based on the compositionally graded Hg1−xCdxTe created by molecular beam epitaxy have been experimentally investigated ... More
Add   Nanostructures with Ge-Si quantum dots for infrared photodetectors
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, V. V. | Izhnin, Igor I.
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
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