Authors: Talipov, Niyaz H. | Voytsekhovskiy, Alexander V.

Source: Semiconductor science and technology. 2018. Vol. 33, № 6. P. 065009 (1-8)

Type: статьи в журналах

Date: 2018

Description: The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1−x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor ce ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew

Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757

Type: статьи в журналах

Date: 2018

Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More

Authors: Izhnin, Igor I. | Syvorotka, I. I. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.

Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354

Type: статьи в сборниках

Date: 2018

Authors: Talipov, Niyaz Kh. | Voytsekhovskiy, Alexander V.

Source: Russian physics journal. 2018. Vol. 61, № 6. P. 1005-1023

Type: статьи в журналах

Date: 2018

Description: The results of experimental studies of processes of the radiation defect formation under ion implantation of narrow-gap CdxHg1-xTe solid solutions (MCT) are presented. The processes of formation of st ... More