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Source: Catalysis: from science to industry : proceedings of VII International scientific school-conference for young scientists, October 11-15, 2022. Tomsk, 2022. P. 158
Type: статьи в сборниках
Date: 2022
Authors:
Rusinov, I. P. |
Blanco-Rey, M. |
Hoffmann, M. |
Vyazovskaya, A. Yu. |
Eremeev, Sergey V. |
Ernst, A. |
Echenique, Pedro Miguel |
Arnau, Andrés |
Chulkov, Evgueni V. |
Otrokov, Mikhail M.
Source: Physical Review Letters. 2019. Vol. 122, № 10. P. 107202-1-107202-6
Type: статьи в журналах
Date: 2019
Description:
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimen
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Source: Journal of applied physics. 2018. Vol. 124, № 8. P. 086101-1-086101-2
Type: статьи в журналах
Date: 2018
Description:
Recently, Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] reported the results of a first principles study of the di-carbon (CsCi) complex in silicon. The authors have found that CsCi may occur
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Source: Journal of materials science. 2018. Vol. 53, № 22. P. 15559-15568
Type: статьи в журналах
Date: 2018
Description:
The structural stability of some two-dimensional materials at ambient conditions is obviously attributed to their low sensitivity to exposure of humidity and air. Recently exfoliated antimonene, diffe
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Source: Journal of physics: Condensed matter. 2018. Vol. 30, № 41. P. 415502 (1-7)
Type: статьи в журналах
Date: 2018
Description:
Heavy metal layers having a honeycomb structure on the Si(1 1 1) surface were theoretically predicted to show prospects for possessing properties of the quantum spin Hall (QSH) insulators. The (Tl, Rb
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Source: Nano letters. 2018. Vol. 18, № 7. P. 4338-4345
Type: статьи в журналах
Date: 2018
Description:
Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing
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Source: Journal of optoelectronics and advanced materials. 2017. Vol. 19, № 1/2. P. 86-90
Type: статьи в журналах
Date: 2017
Description:
The large optical-quality MWO4 (M = Zn, Cd) crystals of mass up to 14 (ZnWO4) and 20 (CdWO4) kg were grown by Low Thermal Gradient Czochralski Technique (LTG Cz). Crystallographic properties of MWO4(0
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Source: Molecular physics. 2017. Vol. 115, № 17/18. P. 2218-2230
Type: статьи в журналах
Date: 2017
Description:
This mini-review presents recent advances in theory of electronic and spectral properties of hetero[8]circulenes used as promising fluorescent emitters for organic light-emitting diodes. Special atten
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Source: Письма в журнал экспериментальной и теоретической физики. 2017. Т. 105, № 8. С. 491-496
Type: статьи в журналах
Date: 2017
Description:
Представлены результаты теоретического исследования электронной структуры и топологических свойств семейства соединений AnMg2Bi2 (А11 = Mg,Ca, Sr,Ba) с использованием точного обмена. Установлено, что
... More
Source: Перспективы развития фундаментальных наук : сборник научных трудов XIV Международной конференции студентов, аспирантов и молодых ученых, Россия, Томск, 25-28 апреля 2017 г.. Томск, 2017. Т. 1 : Физика. С. 276-278
Type: статьи в сборниках
Date: 2017
Description:
The results of theoretical investigation of electronic band structure and topological properties of AIIMg2Bi2 (AII = Mg, Ca, Sr, Ba) using exact exchange are presented. It was found that Mg3Bi2 in its
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи в журналах
Date: 2016
Description:
We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an
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Source: AIP Conference Proceedings. 2016. Vol. 1783. P. 020016-1-020016-4
Type: статьи в журналах
Date: 2016
Description:
One of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on th
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Source: Физика твердого тела : сборник материалов XV Российской научной студенческой конференции, 18-20 мая 2016 г., г. Томск, Россия. Томск, 2016. С. 60-62
Type: статьи в сборниках
Date: 2016
Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 30. P. 305003 (1-5)
Type: статьи в журналах
Date: 2015
Description:
Using ab initio calculations, atomic structure and electronic properties of Si(1 1 1)$sqrt{3} imes sqrt{3}$ -Bi surface modified by adsorption of 1/3 monolayer of alkali metals, Li, Na, K, Rb and Cs,
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Source: Physical Review B. 2015. Vol. 92. P. 081409-1-081409-5
Type: статьи в журналах
Date: 2015
Description:
The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between th
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