Authors: Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Izhnin, Ihor I.

Source: EPJ Web of Conferences. 2017. Vol. 133. P. 02001 (1-4)

Type: статьи в журналах

Date: 2017

Description: Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructure ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.

Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170

Type: статьи в журналах

Date: 2017

Description: Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, Olena I. | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A. | Mynbaev, Karim D.

Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207

Type: статьи в журналах

Date: 2015

Description: Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto ... More

Authors: Dvoretsky, Sergei A. | Mynbaev, Karim D. | Fitsych, Olena I. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Sheregii, E. | Izhnin, Igor I.

Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7

Type: статьи в журналах

Date: 2014