Электронная библиотека (репозиторий) Томского государственного университета
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Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Source: Journal of surface investigation: X-ray, synchrotron and neutron techniques. 2021. Vol. 15, № 1. P. 139-146
Type: статьи в журналах
Date: 2021
Description: Abstract: In this paper, we study the optical properties of aluminum- and silicon-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on glas ... More
Source: Письма в журнал технической физики. 2020. Т. 46, вып. 17. С. 33-36
Type: статьи в журналах
Date: 2020
Description: Рассмотрено влияние УФ-излучения и сильного электрического поля на вольт-амперные характеристики
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat ... More
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical ... More
Source: Semiconductors. 2015. Vol. 49, № 8. P. 1012-1018
Type: статьи в журналах
Date: 2015
Description: The effects of thermal annealing and exposure to oxygen plasma on the electrical and photoelectric properties of metal-TiO2-Si structures are investigated. The TiO2 films are fabricated by the rf magn ... More
Source: Вестник Кузбасского государственного технического университета. 2013. № 4. С. 100-103
Type: статьи в журналах
Date: 2013
Source: Semiconductors. 2012. Vol. 46, № 8. P. 1003-1007
Type: статьи в журналах
Date: 2012
Source: Glass and ceramics. 2012. Vol. 69, № 1/2. P. 25-29
Type: статьи в журналах
Date: 2012
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