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Authors:
Fedorov, Alexander V. |
Poelchen, Georg |
Eremeev, Sergey V. |
Schulz, Susanne |
Generalov, Alexander |
Polley, C. |
Laubschat, Clemens |
Kliemt, Kristin |
Kaya, M. |
Krellner, Cornelius |
Chulkov, Evgueni V. |
Kummer, Kurt |
Usachov, Dmitry Yu. |
Ernst, Arthur |
Vyalikh, Denis V.
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description:
Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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