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Source: Semiconductors. 2017. Vol. 51, № 2. P. 232-238
Type: статьи в журналах
Date: 2017
Description:
The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence
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Source: Russian physics journal. 2015. Vol. 58, № 5. P. 641-645
Type: статьи в журналах
Date: 2015
Description:
Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the qu
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