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Source: Journal of electronic materials. 2017. Vol. 46, № 7. P. 4435-4438
Type: статьи в журналах
Date: 2017
Description:
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In t
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100S-1-98100S-6
Type: статьи в журналах
Date: 2015
Description:
In the present report we studied the distribution of surface potential of the HgCdTe epitaxial films grown by molecular beam epitaxy after the impact of picosecond electron beam and volume discharge i
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Source: Semiconductors. 2015. Vol. 49, № 3. P. 309-312
Type: статьи в журналах
Date: 2015
Description:
Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd x Hg1 − x Te epitaxial films grown by molecular-beam epitaxy. Modification
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Source: Applied physics letters. 2014. Vol. 105, № 10. P. 102107-1-102107-4
Type: статьи в журналах
Date: 2014