Электронная библиотека (репозиторий) Томского государственного университета
2021 | Zhuravlyova, Yelena V.

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Add   Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal
Authors: Yudin, Nikolay N. | Antipov, Oleg L. | Gribenyukov, Alexander I. | Eranov, Ilya D. | Podzyvalov, Sergey N. | Zinoviev, Mikhail M. | Voronin, L. A. | Zhuravlyova, Yelena V. | Zykova, M. P.
Source: Quantum electronics. 2021. Vol. 51, № 4. P. 306-316
Type: статьи в журналах
Date: 2021
Description: We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of expo ... More
Add   Influence of post-post processing technology and laser radiation parameters on the optical breakdown threshold of a ZnGeP2 single crystal
Authors: Yudin, Nikolay N. | Antipov, O. L. | Gribenyukov, Alexander I. | Kranov, I. D. | Podzivalov, S. N. | Zinoviev, Mikhail M. | Zhuravlyova, Yelena V. | Zykova, M. P. | Pfeif, A. A.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 107
Type: статьи в сборниках
Date: 2021
Description: The aim of this work is to determine the influence of the parameters of post-growth technological operations and experimental conditions on the threshold of optical breakdown of the surface of ZGP cry ... More
Add   Laser-induced damage threshold of nonlinear GaSe and GaSe:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 μm
Authors: Zhu, Chongqiang | Dyomin, Victor V. | Yudin, Nikolay N. | Antipov, Oleg L. | Verozubova, Galina | Eranov, Ilya D. | Zinoviev, Mikhail M. | Podzyvalov, Sergey N. | Zhuravlyova, Yelena V. | Slyunko, Elena S. | Yang, Chunhui
Source: Applied sciences. 2021. Vol. 11, № 3. P. 1208 (1-10)
Type: статьи в журналах
Date: 2021
Description: The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed ... More
Add   The effect of volume inclusions of the ZnGeP2 single-crystal on the dispersion of the refraction index and the absorption coefficient in mid-IR and terahertz ranges of wavelengths
Authors: Zinoviev, Mikhail M. | Yudin, Nikolay A. | Gribenyukov, Alexander I. | Podzyvalov, Sergey N. | Dyomin, Victor V. | Polovtsev, Igor G. | Suslyaev, Valentin I. | Zhuravlyova, Yelena V.
Source: Optical materials. 2021. Vol. 111. P. 110662 (1-8)
Type: статьи в журналах
Date: 2021
Description: Volume filamentary inclusions in ZnGeP2 have been visualized using the digital holography method. The chemical composition of the filamentous volume inclusions Zn3P2 and Ge have been determined using ... More
Add   Threshold of laser destruction of nonlinear GaSe and GaSe:in crystals when exposed to pulsed radiation at a wavelength of 2.1 microns
Authors: Yudin, Nikolay N. | Antipov, O. L. | Dyomin, Victor V. | Gribenyukov, Alexander I. | Zinoviev, Mikhail M. | Podzivalov, S. N. | Slyunko, E. S. | Zhuravlyova, Yelena V. | Pfeif, A. A.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 113
Type: статьи в сборниках
Date: 2021
Description: The aim of this work is to determine the optical breakdown threshold of a single crystal GaSe and GaSe:In when exposed to nanosecond radiation of the two micron range and determining the influence of ... More
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