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Source: Physics of the solid state. 2018. Vol. 60, № 9. P. 1686-1690
Type: статьи в журналах
Date: 2018
Description:
Using methods of the density functional theory, the electronic band structure of a hexagonal modification of the layered GaTe semiconductor has been calculated. The structural parameters of a bulk cry
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Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description:
Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h
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