Authors: Gällström, Andreas | Leone, Stefano | Kordina, Olof | Son, Nguyen T. | Ivády, Viktor | Gali, Adam | Abrikosov, Igor A. | Janzén, Erik | Ivanov, Ivan G. | Magnusson, Björn

Source: Physical Review B. 2015. Vol. 92, № 7. P. 075207-1-075207-14

Type: статьи в журналах

Date: 2015

Description: The optical signature of niobium in the low-temperature photoluminescence spectra of three common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously suggested concept that Nb o ... More

Authors: Szász, Krisztián | Abrikosov, Igor A. | Janzen, Erik | Bockstedte, Michel | Gali, Adam | Ivády, Viktor

Source: Physical Review B. 2015. Vol. 91, № 12. P. 121201-1-121201-5

Type: статьи в журналах

Date: 2015

Description: Silicon carbide with engineered point defects is considered as very promising material for the next generation devices, with applications ranging from electronics and photonics to quantum computing. I ... More