Электронная библиотека (репозиторий) Томского государственного университета
Eremeev, Sergey V. | Chulkov, Evgueni V.

Add to Quick Collection   All 52 Results

Showing items 1 - 15 of 52.
Sort:
 Add All Items to Quick Collection
Source: Физическая мезомеханика материалов. Физические принципы формирования многоуровневой структуры и механизмы нелинейного поведения : международная конференция, 5-8 сентября 2022 г., Томск, Россия : тезисы докладов. Новосибирск, 2022. С. 524
Type: статьи в сборниках
Date: 2022
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description: Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct ... More
Source: Международная конференция "Физическая мезомеханика. Материалы с многоуровневой иерархически организованной структурой и интеллектуальные производственные технологии", 6-10 сентября 2021 г., Томск, Россия : тезисы докладов. Томск, 2021. С. 345
Type: статьи в сборниках
Date: 2021
Source: Journal of physics: Condensed matter. 2019. Vol. 31, № 12. P. 1-8
Type: статьи в журналах
Date: 2019
Description: We present a theoretical investigation of the structural and vibrational properties of ordered 2D phases formed by the Li, Na and K atoms on the Cu surface. The lattice relaxation, phonon dispersions ... More
Source: Physical Review Letters. 2019. Vol. 122, № 10. P. 107202-1-107202-6
Type: статьи в журналах
Date: 2019
Description: Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimen ... More
Source: Physica status solidi - Rapid research letters. 2018. Vol. 12, № 12. P. 1800341 (1-8)
Type: статьи в журналах
Date: 2018
Description: By means of angle‐resolved photoemission spectroscopy measurements, the electronic band structure of the three‐dimensional PbBi4Te7 and PbBi6Te10 topological insulators is compared. The measurements c ... More
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description: We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp ... More
Source: Международная конференция "Перспективные материалы с иерархической структурой для новых технологий и надежных конструкций" ; X Международная конференция "Химия нефти и газа" : тезисы докладов. Томск, 2018. С. 851
Type: статьи в сборниках
Date: 2018
Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description: Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan ... More
Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: ACS Nano. 2016. Vol. 10, № 3. P. 3518-3524
Type: статьи в журналах
Date: 2016
Description: By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence ... More
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description: Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the ... More
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи в журналах
Date: 2015
Description: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d ... More
Source: Physical Review B. 2015. Vol. 91, № 8. P. 081201-1-081201-6
Type: статьи в журналах
Date: 2015
Description: A strong spin-orbit interaction leads to a Rashba-type splitting of the bulk bands of BiTeCl, which results in toroidal Fermi surfaces with distinct spin structures depending on the chemical potential ... More
^